Lasing actions in GaN tiny hexagonal nanoring resonators

IEEE Photonics Journal

Volumn 2, Issue 6, 2010, Pages 1027-1033

  Kouno, Tetsuya ^a,b   Kishino, Katsumi ^a,b   Suzuki, Takuto ^a   Sakai, Masaru ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Nanostructures; photonic materials; semiconductors; solid state lasers

Indexed keywords

CAVITY CONFIGURATION; HIGH-CRYSTALLINE QUALITY; LASING ACTION; NANO-METER SCALE; OPTICALLY PUMPED; PERIODIC BOUNDARY CONDITIONS; PHOTONIC MATERIALS; RESONANCE WAVELENGTHS; RF PLASMA; SELECTIVE AREA GROWTH; SEMICONDUCTORS; SHORT LENGTHS; SINGLE LONGITUDINAL MODE; THREADING DISLOCATION; THROUGH THE WALL; TRANSVERSE MODE;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANORINGS; RESONATORS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SOLID STATE LASERS;

NANOSTRUCTURED MATERIALS;

EID: 78649402299     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2010.2091266     Document Type: Article

References (19)

1. T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. Grundmann, "Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section", Phys. Rev. Lett., vol. 93, no. 10, p. 103903-1, Sep. 2004.
2. D. K. Arrmani, T. J. Kippenberg, S. M. Spillane, and K. J. Vahala, "Ultra-high-Q toroid microcavity on a chip", Nature, vol. 421, no. 6926, pp. 925-928, Feb. 2003.
3. T. Nobis and M. Grundmann, "Low-order optical whispering-gallery modes in hexagonal nanocavities", Phys. Rev. A, Gen. Phys., vol. 72, no. 6, p. 063806, Dec. 2005.
4. D. S. Yu, Y. J. Chen, B. J. Li, X. D. Chen, M. Q. Zhang, F. L. Zhao, and S. Ren, "Structural and lasing characteristics of ultrathin hexagonal ZnO nanodisks grown vertically on silicon-on-insulator substrates", Appl. Phys. Lett., vol. 91, no. 9, p. 091116, Aug. 2007.
5. C. Czekalla, C. Sturm, R. Schmidt-Grund, B. Cao, M. Lorenz, and M. Grundmann, "Whispering gallery mode lasing in zinc oxide microwires", Appl. Phys. Lett., vol. 92, no. 24, p. 241102, Jun. 2008.
6. D. Wang, H. W. Seo, C.-C. Tin, M. J. Bozak, J. R. Williams, M. Park, and Y. Tzeng, "Lasing in whispering gallery mode in ZnO nanonails", J. Appl. Phys., vol. 99, no. 9, p. 093112, May 2006.
7. A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, "Room-temperature continuous-wave lasing in GaN/InGaN microdisks", Nat. Photon., vol. 1, no. 1, pp. 61-64, Jan. 2007.
8. D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J.-F. Carlin, R. Butte, and N. Grandjean, "High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers", Appl. Phys. Lett., vol. 92, no. 17, p. 171102, Apr. 2008.
9. C. Seassal, X. Letartre, J. Brault, M. Gendry, P. Pottier, and P. Viktorovitch, "InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation", J. Appl. Phys., vol. 88, no. 11, pp. 6170-6174, Dec. 2000.
10. Y. Chu, A. M. Mintairov, Y. He, J. L. Merz, N. A. Kalyuzhnyy, V. M. Lantratov, and S. A. Mintairov, BLasing of whisperinggallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots", Phys. Lett. A, vol. 373, no. 12/13, pp. 1185-1188, Mar. 2009.
11. 3 (0001) by RF-radical source molecular beam epitaxy", Jpn. J. Appl. Phys., vol. 36, no. 4 B, pp. L459-L462, Apr. 1997.
12. H. Sekiguchi, T. Nakazato, A. Kikuchi, and K. Kishino, "Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy", J. Cryst. Growth, vol. 300, no. 1, pp. 259-262, Mar. 2007.
13. S. Ishizawa, K. Kishino, and A. Kikuchi, "Selective-area growth of GaN nanocolumns on Si (111) substrates using nitrided al nanopatterns by rf-plasma-assisted molecular-beam epitaxy", Appl. Phys. Express, vol. 1, no. 5, p. 015006, Jan. 2008.
14. K. Kishino, T. Hoshino, S. Ishizawa, and A. Kikuchi, "Selective-area growth of GaN nanocolumns on titanium-maskpatterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy", Electron. Lett., vol. 44, no. 13, pp. 819-821, Jun. 2008.
15. S. D. Hersee, X. Sun, and X. Wang, "The controlled growth of GaN nanowires", Nano Lett., vol. 6, no. 8, pp. 1808-1811, Aug. 2006.
16. H. Sekiguchi, K. Kishino, and A. Kikuchi, "Ti-mask selective-area growth of GaN by RF-plasma-assisted molecularbeam epitaxy for fabricating regularly arranged InGaN/GaN nanocolumns", Appl. Phys. Express, vol. 1, no. 12, p. 124002, Dec. 2008.
17. K. Kishino, H. Sekiguchi, and A. Kikuchi, "Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy-Formation of high-quality GaN microcolumns", J. Cryst. Growth, vol. 311, no. 10, pp. 2956-2961, May 2009.
18. T. Kouno, K. Kishino, and A. Kikuchi, "Whispering gallery mode in periodic InGaN-based hexagonal nanoring arrays grown by rf-MBE using Ti-mask selective-area growth", Phys. Stat. Sol. (A), vol. 207, no. 1, pp. 37-40, Jan. 2010.
19. 1-xN grown on (111) Si substrates", J. Appl. Phys., vol. 93, no. 9, pp. 5222-5226, May 2003.