Metal precursor influence on performance of CuIn1-xGa xSe2 films

Chinese Journal of Chemical Physics

Volumn 23, Issue 3, 2010, Pages 363-367

  Wang, Man ^a   Zhang, Zhong Wei ^a   Jiang, Guo Shun ^a   Zhu, Chang Fei ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Quantum efficiency; Raman; Scanning electron microscopy; Sputtering; X ray diffraction

Indexed keywords

BINARY ALLOYS; COPPER ALLOYS; COPPER COMPOUNDS; COPPER METALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; LIME; METALS; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SELENIUM COMPOUNDS; SEMICONDUCTOR ALLOYS; SPECTROMETERS; SPUTTERING; SUBSTRATES; TERNARY ALLOYS; THIN FILMS; X RAY DIFFRACTION;

CHALCOPYRITE STRUCTURES; DIRECT CURRENT SPUTTERING; PHOTO-ELECTRIC CONVERSION EFFICIENCY; QUANTUM EFFICIENCY MEASUREMENTS; RADIO FREQUENCY SPUTTERING; RAMAN; SODA LIME GLASS SUBSTRATE; X-RAY DIFFRACTION SPECTRUM;

GALLIUM ALLOYS;

EID: 78649381179     PISSN: 16740068     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-0068/23/03/363-367     Document Type: Article

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