A peak in density dependence of electron spin relaxation time in n-type bulk gaas in the metallic regime

Chinese Physics Letters

Volumn 26, Issue 6, 2009, Pages

  Ka, Shen ^a,b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSPINNING; III-V SEMICONDUCTORS; MAGNETIC MOMENTS; RELAXATION TIME; SEMICONDUCTING GALLIUM; SPIN DYNAMICS;

DENSITY DEPENDENCE; ELECTRON-SPIN RELAXATION; GAAS; LATE WORK; METALLIC REGIME; SPIN RELAXATION TIME;

GALLIUM ARSENIDE;

EID: 68449086591     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/6/067201     Document Type: Article

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