Effects of substrate heating on the amorphous structure of InGaZnO films and the electrical properties of their thin film transistors

Applied Physics Express

Volumn 3, Issue 11, 2010, Pages

  Moon, Mi Ran ^a   Na, Sekwon ^a   Jeon, Haseok ^a   An, Chee Hong ^a   Park, Kyung ^a   Jung, Donggeun ^a   Kim, Hyongsub ^a   Lee, Young Boo ^b   Lee, Hoo Jeong ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STRUCTURES; ATOMIC ORDERS; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; HEATED SUBSTRATES; SELECTED AREA ELECTRON DIFFRACTION; SUBSTRATE HEATING; UNHEATED SUBSTRATES;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; HEATING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SUBSTRATES; THIN FILM TRANSISTORS;

AMORPHOUS FILMS;

EID: 78549259675     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.111101     Document Type: Article

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