Local gate effect of mechanically deformed crossed carbon nanotube junction

Nano Letters

Volumn 10, Issue 11, 2010, Pages 4715-4720

  Qing, Quan ^b   Nezich, Daniel A ^c   Kong, Jing ^d   Wu, Zhongyun ^a   Liu, Zhongfan ^a  

^a PEKING UNIVERSITY   (China)

^b HARVARD UNIVERSITY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d USA   (United States)

Author keywords

Carbon nanotube; crossed junction; localized charges; transconductance modulation

Indexed keywords

AFM TIP; AMBIENT ENVIRONMENT; ATOMIC FORCE MICROSCOPES; CARBON NANOTUBE JUNCTIONS; CROSSED-JUNCTION; ELECTRO-MECHANICAL SENSORS; LOCAL DEFORMATIONS; LOCALIZED CHARGE; LOCALIZED STATE; NON-VOLATILE; POTENTIAL APPLICATIONS; SOURCE-DRAIN VOLTAGE; THRESHOLD PRESSURES;

DEFORMATION; ELECTROMECHANICAL DEVICES; MODULATION; TRANSCONDUCTANCE;

CARBON NANOTUBES;

CARBON NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELD; MACROMOLECULE; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE; YOUNG MODULUS;

CRYSTALLIZATION; ELASTIC MODULUS; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELDS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES, CARBON; PARTICLE SIZE; SEMICONDUCTORS; STRESS, MECHANICAL; SURFACE PROPERTIES;

EID: 78449276260     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103084j     Document Type: Article

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