Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-μm-emitting quantum cascade lasers

Optical Engineering

Volumn 49, Issue 11, 2010, Pages

  Botez, Dan ^a   Shin, Jae Cheol ^a   Kumar, Sushil ^b   Mawst, Luke J ^a   Vurgaftman, Igor ^c   Meyer, Jerry R ^c  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b Lehigh University   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

electron leakage current; hot electrons; mid infrared; quantum cascade lasers; slope efficiency characteristic temperature; threshold current characteristic temperature

Indexed keywords

ACTIVE REGIONS; CHARACTERISTIC TEMPERATURE; CONDUCTION BAND EDGE; DEEP QUANTUM WELL; DIFFERENTIAL QUANTUM EFFICIENCY; ELECTRON LEAKAGE; INJECTED ELECTRONS; LASER LEVEL; MID INFRARED; MINIBANDS; REGION ENERGY; SLOPE-EFFICIENCY CHARACTERISTIC TEMPERATURE; TEMPERATURE RANGE; THERMAL EXCITATION; THRESHOLD-CURRENT CHARACTERISTIC TEMPERATURE; WAVEGUIDE LOSS; WELL STRUCTURE;

ELECTRONS; HOT ELECTRONS; INFRARED LASERS; JET PUMPS; LASER EXCITATION; LEAKAGE CURRENTS; QUANTUM CASCADE LASERS;

QUANTUM EFFICIENCY;

EID: 78249290196     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.3509368     Document Type: Article

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