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Electronics Letters

Volumn 45, Issue 14, 2009, Pages 741-743

Ultra-low temperature sensitive deep-well quantum cascade lasers (λ=4.8m) via uptapering conduction band edge of injector regions

(5) Shin, J C a Mawst, L J a Botez, D a Vurgaftman, I b Meyer, J R b

a UNIVERSITY OF WISCONSIN MADISON (United States)

b NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CARRIER LEAKAGE; CHARACTERISTIC TEMPERATURE; CONDUCTION BAND EDGE; NEW DESIGN; QC LASERS; SLOPE EFFICIENCIES; ULTRA LOW TEMPERATURES;

CONDUCTION BANDS; ELECTRON MOBILITY; JET PUMPS; LASERS; QUANTUM THEORY;

QUANTUM WELL LASERS;

EID: 67650290528 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el.2009.1393 Document Type: Article

Times cited : (17)

References (6)

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2
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3
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- Wallplug efficiency of quantum cascade lasers: Critical parameters and fundamental limits
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4
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5
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- Highly temperature insensitive, deep-well 4.8m emitting quantum cascade semiconductor lasers
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- Shin, J.C.¹ D'Souza, M.² Liu, Z.³ Kirch, J.⁴ Mawst, L.J.⁵ Botez, D.⁶ Vurgaftman, I.⁷ Meyer, J.R.⁸

6
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