Scream for multi-level movable structures by inductively coupled plasma process

ASME International Mechanical Engineering Congress and Exposition, Proceedings

Volumn , Issue , 2002, Pages 347-350

  Lin, Yu Hsin ^a,b   Yin, Hung Ling ^a   Hsu, Yung Yu ^a   Hu, Yi Chiuen ^a   Chou, Hsiao Yu ^a   Yang, Tsung Hsun ^a  

^a INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^b Science Base Industrial Park   (Taiwan)

Author keywords

Actuators; Inductively coupled plasma reactive ion etching (ICP RIE); Micro Electro Mechanical systems (MEMS)

Indexed keywords

ACTUATORS; COMPOSITE MICROMECHANICS; ELECTROMAGNETIC INDUCTION; FABRICATION; INDUCTIVELY COUPLED PLASMA; IONS; MECHANICAL ENGINEERING; MECHANICS; MEMS; MICROELECTROMECHANICAL DEVICES;

COMBDRIVE; EXPERIMENTAL INVESTIGATIONS; FABRICATION PARAMETERS; FABRICATION PROCESS; ICP-RIE; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; INDUCTIVELY-COUPLED; MICROELECTROMECHANICAL SYSTEMS; MOVABLE STRUCTURE; MULTI-LEVEL; SINGLE CRYSTAL SILICON; SUSPENSION STRUCTURE; WELL PROFILE;

REACTIVE ION ETCHING;

EID: 78249278530     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/IMECE2002-33382     Document Type: Conference Paper

References (10)

1. I. W. Rangelow, 1997, Reactive ion etching for high aspect ratio silicon micromaching, Surface and Coatings Technology 97 140-150
2. Meint de Boer, Henri Jansen, Miko Elwenspoek, The black silicon method • • A study of the fabrication of movable structures for micro Electromechanical systems, Transducers'95 Eurosensors • •.
3. Kevin. A. Shaw, Z. Lisa. Zhang, Noel. C. MacDonald, 1993 SCREAM • •A single mask, single-crystal silicon process for Microelectromechanical structures, IEEE••
4. Noel. C. MacDonald, 1996, SCREAM MicroElectroMechanical Systems, Microelectronic Engineering.
5. F. Lärmer, A. Schilp, Method of anisotropically etching silicon, German Patent DE4241045C1, USA patents 4855017 and 4784720.
6. A. M. Hynes, H. Ashraf, J. K. Bhardwaj, J. Hopkins, I. Johnston, J. N. Shepherd, 1999, Recent advances in silicon etching for MEMS using the ASE process, Sensors and Actuators.
7. Henri Jansen, Meint de Boer, Rob Legtenberg and Miko Elwenspoek, 1995, The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control, 1995 IOP Publishing Ltd.
8. M. Chabloz, Y. Sakai, T. Matsuura, K. Tsutsumi, 2000, Improvement of sidewall roughness in deep silicon etching, Microsystem Technologies 6 86-89.
9. Jenri Jansen. Meint de Boer, Miko Elwenspoek, 1996, The black silicon method • • High aspect ratio trence etching for MEMS applications, IEEE.
10. C.K. Chung, H.C. Lu, T.H. Jaw, 2000, High aspect ratio silicon trench fabrication by inductively coupled plasma, Microsystem Technologies 6 106-108