Electrical and optical properties of Sb-doped BaSnO3 epitaxial films grown by pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 43, Issue 45, 2010, Pages

  Liu, Qinzhuang ^a   Dai, Jianming ^a   Liu, Zhongliang ^a   Zhang, Xiaobo ^a   Zhu, Guangping ^a   Ding, Guohua ^a  

^a HUAIBEI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CARRIER DENSITY; DOPING CONTENT; ELECTRIC FIELD HYSTERESIS LOOP; ELECTRICAL AND OPTICAL PROPERTIES; FERROELECTRIC CAPACITORS; HETEROSTRUCTURES; METAL-SEMICONDUCTOR TRANSITIONS; OPTICAL CHARACTERISTICS; PULSED LASER; ROOM-TEMPERATURE RESISTIVITY; SB-DOPED; SEMICONDUCTOR BEHAVIOURS; SRTIO; TEMPERATURE-DEPENDENT RESISTIVITY; VISIBLE REGION;

BARIUM; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; FERROELECTRIC FILMS; HYSTERESIS; HYSTERESIS LOOPS; LEAD; OPTICAL PROPERTIES; PEROVSKITE; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR LASERS; TIN; ZIRCONIUM;

OPTICAL FILMS;

EID: 78249259416     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/45/455401     Document Type: Article

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