Electrical properties and x-ray photoelectron spectroscopy studies of Bi (Zn0.5Ti0.5) O3 doped Pb (Zr 0.4Ti0.6) O3 thin films

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Tang, M H ^a,b   Zhang, J ^a   Xu, X L ^a   Funakubo, H ^b   Sugiyama, Y ^c   Ishiwara, H ^b   Li, J ^a  

^a XIANGTAN UNIVERSITY   (China)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SOLUTION DEPOSITION; COERCIVE FIELD; ELECTRICAL PROPERTY; FATIGUE PROPERTIES; FERROELECTRIC PROPERTY; PEROVSKITE PHASE; PT(111); PZT; PZT FILM; REMNANT POLARIZATIONS; SI (100) SUBSTRATE; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

DOPING (ADDITIVES); ELECTRIC FIELDS; FERROELECTRIC FILMS; LEAD; PEROVSKITE; PHOTOELECTRICITY; PHOTONS; PLATINUM; SILICON COMPOUNDS; ZIRCONIUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 78149460682     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3499305     Document Type: Article

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