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Volumn 57, Issue 3, 2010, Pages 458-463

Dielectric relaxation of oxygen vacancies in dy-doped BaTiO3

Author keywords

Batio3; Defect complex; Dielectric relaxation; Dy

Indexed keywords


EID: 78149370840     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.57.458     Document Type: Article
Times cited : (16)

References (25)
  • 8
    • 0003693189 scopus 로고
    • Edited By F Seitz and D. Turnbull (Academic, New York)
    • F. A. Kröger and H. J. Vink, Solid State Physics, edited by F. Seitz and D. Turnbull (Academic, New York, 1956).
    • (1956) Solid State Physics
    • Kröger, F.A.1    Vink, H.J.2
  • 23
    • 78149405667 scopus 로고
    • U. S. Patent No. 3,330,697 (11 July)
    • M. Pechini, U. S. Patent No. 3,330,697 (11 July 1967).
    • (1967)
    • Pechini, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.