Relaxation behavior of oxygen vacancy complexes in Ba(Ti1-xCax)O3-x

Materials Chemistry and Physics

Volumn 121, Issue 1-2, 2010, Pages 161-164

  Lee, Seong Jin ^a   Park, Il Jeong ^a   Han, Young Ho ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

: Dielectric loss; Ca doped BaTiO3; Defect complex

Indexed keywords

CA-DOPED; CURIE POINTS; DEFECT CENTERS; DEFECT COMPLEX; DIELECTRIC CONSTANTS; DOPING LEVELS; EXTENDED MOTION; HIGHER FREQUENCIES; HIGHER TEMPERATURES; LOWER FREQUENCIES; OXYGEN-VACANCY COMPLEXES; RELAXATION BEHAVIORS; SWING MOTION;

ACTIVATION ENERGY; BARIUM; BARIUM COMPOUNDS; CALCIUM; DEFECTS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; DOPING (ADDITIVES); OXYGEN; PERMITTIVITY; TITANIUM COMPOUNDS; VACANCIES;

OXYGEN VACANCIES;

EID: 77949491563     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.01.005     Document Type: Article

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