Dielectric relaxation of Al-doped BaTiO3

Japanese Journal of Applied Physics

Volumn 48, Issue 3, 2009, Pages 031403-

  Lee, Seong Jin ^a   Park, Sang Min ^a   Han, Young Ho ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; AL-DOPING; CURIE POINTS; DEFECT COMPLEX; DIELECTRIC CONSTANTS; HIGH TEMPERATURE; HIGHER FREQUENCIES; HIGHER TEMPERATURES; LATTICE PARAMETERS; LOWER FREQUENCIES; SOLUBILITY LIMITS;

ACTIVATION ENERGY; BARIUM; BARIUM COMPOUNDS; CERAMIC CAPACITORS; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; DIELECTRIC WAVEGUIDES; DOPING (ADDITIVES); OXYGEN; OXYGEN VACANCIES; PERMITTIVITY;

ALUMINUM;

EID: 67650841613     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.031403     Document Type: Article

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