The optimization of interfacial properties of nc-Si:H/c-Si solar cells in hot-wire chemical vapor deposition process

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue SUPPL. 1, 2007, Pages 33-36

  Zhang, Qunfang ^a   Zhu, Meifang ^a   Liu, Fengzhen ^a   Zhou, Yuqin ^a  

^a UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN TREATMENT; EPITAXIAL SILICON BUFFER LAYER; HOT-WIRE CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); NANOCRYSTALLINE SILICON; PASSIVATION;

SILICON SOLAR CELLS;

EID: 34547581189     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9180-1     Document Type: Conference Paper

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