High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt

Solid-State Electronics

Volumn 55, Issue 1, 2011, Pages 49-53

  Yuan, Bo ^a   Zheng, Xue Jun ^a   Chen, Yi Qiang ^a   Yang, Bo ^a   Zhang, Tong ^b  

^a XIANGTAN UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

Photoconductive; Semiconductor switch; UV light; ZnO single NB

Indexed keywords

CIRCUIT STATE; DECAY TIME; LOW-POWER CONSUMPTION; MIXED SOLUTION; OXYGEN CHEMISORPTION; PHOTOCONDUCTIVE; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; PROBE TECHNIQUE; RISETIMES; SOURCE METER; TEST CIRCUIT; UV ILLUMINATIONS; UV LIGHT; VOLTAGE RESPONSE; WAVELENGTH RANGES; ZNO;

CHEMISORPTION; DARK CURRENTS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRIC SWITCHGEAR; LIGHT SENSITIVE MATERIALS; NANOBELTS; OXYGEN; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; SEMICONDUCTOR SWITCHES; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78149283682     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.09.002     Document Type: Article

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