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Volumn 68, Issue 15, 2003, Pages
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Electronic structure and ground states of transition metals encapsulated in a Si12 hexagonal prism cage
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Author keywords
[No Author keywords available]
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Indexed keywords
SILICON;
TRANSITION ELEMENT;
ARTICLE;
ATOM;
ELECTRON;
ELECTRONICS;
ENCAPSULATION;
PREDICTION;
PRISM;
STRUCTURE ANALYSIS;
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EID: 2342573805
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.68.155404 Document Type: Article |
Times cited : (140)
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References (30)
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