SCOPUS 정보 검색 플랫폼

Volumn 39, Issue 12, 2010, Pages 2618-2626

Thermal management and interfacial properties in high-power GaN-based light-emitting diodes employing diamond-added Sn-3 wt.%Ag-0.5 wt.%Cu solder as a die-attach material

(5) Chen, Chia Ju a Chen, Chih Ming a Horng, Ray Hua b Wuu, Dong Sing a Hong, Jhih Sin a

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

diamond; die attach materials; interfacial reaction; light emitting diodes; Thermal resistance

Indexed keywords

BACKSIDE METALLIZATION; DE-WETTING; DIE-ATTACH MATERIALS; GAN-BASED LIGHT-EMITTING DIODES; HIGH POWER LED; HIGH-POWER; INITIAL STAGES; INTERFACIAL PROPERTY; INTERFACIAL REACTIONS; LED CHIPS; SOLDER JOINTS; SURFACE TEMPERATURES; THERMAL MANAGEMENT; THERMAL RESISTANCE; WETTING LAYER;

CHIP SCALE PACKAGES; DIAMONDS; DIES; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLIZING; PHASE INTERFACES; TEMPERATURE CONTROL; TIN; TIN ALLOYS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 78049529228 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1354-6 Document Type: Conference Paper

Times cited : (37)

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