Single-electron transistor fabricated by two bottom-up processes of electroless Au plating and chemisorption of Au nanoparticle

Japanese Journal of Applied Physics

Volumn 49, Issue 9 PART 1, 2010, Pages

  Azuma, Yasuo ^a,b   Yasutake, Yuhsuke ^a,d   Kono, Keijiro ^a   Kanehara, Masayuki ^b,c   Teranishi, Toshiharu ^b,c   Majima, Yutaka ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOPARTICLE; COULOMB DIAMONDS; COULOMB STAIRCASE; DOUBLE BARRIERS; DRAIN VOLTAGE; ELECTROLESS AU PLATING; NANOGAP ELECTRODES; ORTHODOX THEORY; SIDE GATE; THEORETICAL RESULT; TUNNELING JUNCTIONS; TUNNELING RESISTANCE;

CHEMISORPTION; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTROLESS PLATING; GOLD; NANOPARTICLES; STAIRS; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 78049387186     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.090206     Document Type: Article

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