Chemically assisted vapour transport for bulk ZnO crystal growth

Journal of Crystal Growth

Volumn 312, Issue 23, 2010, Pages 3417-3424

  Santailler, Jean Louis ^a   Audoin, Claire ^a   Chichignoud, Guy ^b   Obrecht, Rmy ^a   Kaouache, Belkhiri ^a   Marotel, Pascal ^a   Pelenc, Denis ^a   Brochen, Stphane ^a   Merlin, Jrmy ^a   Bisotto, Isabelle ^a   Granier, Carole ^a   Feuillet, Guy ^a   Levy, Franois ^a  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

A2. Growth from vapour; B1. Oxides; B1. Zinc compounds; B2. Semiconducting IIVI materials; B3. Light emitting diodes

Indexed keywords

B1. OXIDES; B1. ZINC COMPOUNDS; CHEMICAL VAPOUR TRANSPORT; DOPED LAYERS; FEED MATERIALS; GROWTH FROM VAPOUR; HALL MEASUREMENTS; INDUSTRIAL PRODUCTION; P-TYPE; SEMICONDUCTING II-VI MATERIALS; SUBLIMATION RATES; VAPOUR TRANSPORT; VAPOUR-PHASE; XRD; ZNO CRYSTALS;

CRYSTAL GROWTH; DEFECT DENSITY; ELECTRIC PROPERTIES; LIGHT EMISSION; LIGHT EMITTING DIODES; SINGLE CRYSTALS; SUBLIMATION; TRANSITION METAL COMPOUNDS; VARIABLE SPEED TRANSMISSIONS; ZINC; ZINC OXIDE;

SEMICONDUCTOR GROWTH;

EID: 78049284251     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.08.046     Document Type: Article

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