Growth of high-quality ZnO single crystals by seeded CVT using the newly designed ampoule

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3609-3612

  Hong, Sang Hwui ^a   Mikami, Makoto ^a   Mimura, Kouji ^a   Uchikoshi, Masahito ^a   Yasuo, Akihiko ^a   Abe, Seishi ^b   Masumoto, Katashi ^b   Isshiki, Minoru ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Research Institute of Electric and Magnetic Alloys Sendai   (Japan)

Author keywords

A2. Growth from vapor; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

A2. GROWTH FROM VAPOR; B1. OXIDES; B2. SEMICONDUCTING II-VI MATERIALS; FACETED CRYSTALS; HIGH CRYSTALLINITY; HIGH PURITY; HIGH QUALITY; PHOTOLUMINESCENCE MEASUREMENTS; SECONDARY ION MASS SPECTROSCOPY; SEEDED CHEMICAL VAPOR TRANSPORTS; TRANSPORT AGENT; X RAY ROCKING CURVE; ZNO SINGLE CRYSTALS;

COMMUNICATION CHANNELS (INFORMATION THEORY); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; VAPORS; VARIABLE SPEED TRANSMISSIONS; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 67649836258     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.05.015     Document Type: Article

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