Unconventional gap state of trapped exciton in lead sulfide quantum dots

Nanotechnology

Volumn 21, Issue 45, 2010, Pages

  Lewis, J E ^a   Wu, S ^a   Jiang, X J ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DARK EXCITONS; DESIGN ENGINEERING; EXCITON STATE; GAP STATE; IN-GAP STATE; LEAD SELENIDE; LEAD SULFIDE; OTHER OPTO-ELECTRONIC DEVICES; PHOTOINDUCED ABSORPTION; QUANTUM DOT; STOKES SHIFT; TEMPERATURE DEPENDENCE; TRAP STATE; TRAPPED EXCITON;

ABSORPTION; EXCITONS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM DOTS; SURFACE DEFECTS;

QUANTUM THEORY;

EID: 77958598530     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/45/455402     Document Type: Article

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