SCOPUS 정보 검색 플랫폼

Volumn 600-603, Issue , 2009, Pages 791-794

Effect of gate wet reoxidation on reliability and channel mobility of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC (0001̄)

(6) Suzuki, Takuma a,b Senzaki, Junji c Hatakeyama, Tetsuo a,b Fukuda, Kenji c Shinohe, Takashi a,b Arai, Kazuo c

a TOSHIBA CORPORATION (Japan)

b R&D Association for Future Electron Devices (Japan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Channel mobility; FET; MOS; Reliability; SiC; TDDB

Indexed keywords

CARBON; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; FABRICATION; GATES (TRANSISTOR); METALLIC COMPOUNDS; METALS; MOLYBDENUM; MOS DEVICES; OXIDE SEMICONDUCTORS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

CHANNEL MOBILITY; FIELD EFFECTS; INVERSION CHANNELS; OXIDE RELIABILITY; OXIDIZED FILMS; RE-OXIDATION; TDDB; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MOSFET DEVICES;

EID: 63849201602 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (15)

References (9)

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