Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

Applied Physics Letters

Volumn 80, Issue 9, 2002, Pages 1583-1585

  De Poortere, E P ^a   Shkolnikov, Y P ^a   Tutuc, E ^a   Papadakis, S J ^a   Shayegan, M ^a   Palm, E ^b   Murphy, T ^b  

^a Princeton University   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS; FILLING FACTOR; FRACTIONAL QUANTUM HALL STATE; G FACTORS; GAAS; HIGH ORDER; LANDAU LEVELS; MODULATION-DOPED;

ELECTRON MOBILITY; HALL MOBILITY; SEMICONDUCTOR QUANTUM WELLS;

ELECTRONS;

EID: 79955983351     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456265     Document Type: Article

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