SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 19, Issue 27, 2009, Pages 65-70

Characteristics of Gallium doped ZnO thin films deposited by sol gel dip coating

(5) Kalaivanan, A a Perumal, S b Neelakanda Pillai, N a Sivaramamoorthy, K c Murali, K R d

a Arignar Anna College (India)

b S T HINDU COLLEGE (India)

c Rajapalayam Rajus College (India)

d CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE (India)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM; II-VI SEMICONDUCTORS; OXIDE FILMS; OXIDE MINERALS; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; ZINC COATINGS; ZINC OXIDE;

BAND-GAP VALUES; DOPANT CONCENTRATIONS; DOPED SAMPLE; DOPED ZNO THIN FILMS; HEXAGONAL STRUCTURES; SHORT WAVELENGTHS; SOL GEL DIP COATING; ZINC OXIDE (ZNO);

SEMICONDUCTOR DOPING;

EID: 77958476133 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3265869 Document Type: Conference Paper

Times cited : (5)

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