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Volumn 519, Issue 2, 2010, Pages 943-946

Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3 - δ films on Si substrates

Author keywords

Annealing; Crystal structure; Oxygen vacancies; Perovskites; Transport property

Indexed keywords

ANNEALING PROCESS; CORE-LEVEL PHOTOELECTRON SPECTROSCOPY; DIRECT OBSERVATION; LATTICE OXYGEN; LOW OXYGEN PRESSURE; OXYGEN CONTENT; RADIO FREQUENCY SPUTTERING; SI SUBSTRATES; TRANSPORT BEHAVIOR; TRANSPORT MEASUREMENTS; VACUUM CONDITION; VALENCE BAND SPECTRA; X-RAY DIFFRACTION MEASUREMENTS;

EID: 77958471639     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.08.129     Document Type: Article
Times cited : (47)

References (36)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.