Ellipsometric characterization of LaNio3-x films grown on Si (111) substrates: Effects of oxygen partial pressure

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4036-4041

  Hu, Z G ^a   Huang, Z M ^a   Wu, Y N ^a   Zhao, Q ^a   Wang, G S ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSIONS; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL ELECTRODES; ELLIPSOMETRY; FILM GROWTH; INDUCTIVELY COUPLED PLASMA; LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; MIXTURES; MULTILAYERS; OSCILLATORS (ELECTRONIC); PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; REFRACTIVE INDEX; SURFACES; X RAY DIFFRACTION ANALYSIS;

ATOMIC EMISSION SPECTROMETRY; OXYGEN PARTIAL PRESSURE; RADIO FREQUENCY MAGNETRON SPUTTERING; SPECTROSCOPIC ELLIPSOMETRY (SE);

FERROELECTRIC THIN FILMS;

EID: 2342614325     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1686904     Document Type: Article

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