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Volumn 57, Issue 1, 2009, Pages 1009-1019

A scalable RFCMOS noise model

Author keywords

BSIM3v3; HF noise modeling; High frequency (HF) noise model; RF MOSFET; RFCMOS; Verilog A

Indexed keywords

BSIM3V3; HIGH-FREQUENCY NOISE; NOISE MODELING; RF MOSFETS; RF-CMOS; VERILOG-A;

EID: 77958105930     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper
Times cited : (9)

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    • C. H. Chen, M. J. Deen, Y. H. Cheng, and M. Matloubian, "Extraction of the induced gate noise, channel thermal noise and their correlation in sub-micron MOSFETs from RF noise measurements," IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2884-2892, Dec. 2001. (Pubitemid 34091903)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.