Power broadening of the exciton linewidth in a single InGaAs/GaAs quantum dot

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4202-4204

  Stufler, Stefan ^a   Ester, Patrick ^a   Zrenner, Artur ^a   Bichler, Max ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC EXCITATION; PHOTOCURRENTS; RESONANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS;

INGAAS; LINEAR POLARIZATION; RESONANT EXCITATION; SPECTRAL RESOLUTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 10044259890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1815373     Document Type: Article

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