Fabrication of genuine single-quantum-dot light-emitting diodes

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Schmidt, R ^a   Scholz, U ^a   Vitzethum, M ^a   Fix, R ^a   Metzner, C ^a   Kailuweit, P ^b   Reuter, D ^b   Wieck, A ^b   Hubner M C ^c   Stufler, S ^c   Zrenner, A ^c   Malzer, S ^a   Dohler G H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ION BEAMS; ION IMPLANTATION; PHOTOLITHOGRAPHY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

BOTTOM CONTACT STRIPE; BUFFER LAYER; DOT DENSITIES; FOCUSED ION BEAM IMPLANTATION;

LIGHT EMITTING DIODES;

EID: 33645533657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2188057     Document Type: Article

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