Control of photoluminescence wavelength from uniform InAs quantum dots by annealing

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 88-91

  Kobayashi, Yoshiyuki ^a   Yamaguchi, Koichi ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

GaAs; InAs; Interdiffusion; Molecular beam epitaxy; Photoluminescence; Post growth annealing; Quantum dot

Indexed keywords

ANNEALING; CHEMICAL MODIFICATION; DENSITY (SPECIFIC GRAVITY); ELECTRON ENERGY LEVELS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SILICA; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

GAAS; INAS; POST-GROWTH ANNEALING; SELF-ASSEMBLED QUANTUM DOTS; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 15844430124     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.131     Document Type: Conference Paper

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