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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 8, 2010, Pages 1940-1943

Scanning X-ray excited optical luminescence microscopy of multi-crystalline silicon

(6) Vyvenko, O a,c Arguirov, T a,b Seifert, W a,b Zizak, I d Trushin, M a Kittler, M a,b

a BRANDENBURG UNIVERSITY OF TECHNOLOGY (Germany)

b IHP (Germany)

c ST PETERSBURG STATE UNIVERSITY (Russian Federation)

d HAHN MEITNER INSTITUT (Germany)

Author keywords

Silicon; X ray absorption (XAS); X ray beam induced current (XBIC); X ray excited optical luminescence microscopy (m SXEOL); X ray fluorescence (XRF)

Indexed keywords

CONTACTLESS TECHNIQUE; MICROSCOPY TECHNIQUE; MULTI-CRYSTALLINE SILICON; OPTICAL LUMINESCENCE; SPATIAL DISTRIBUTION; X RAY BEAM; X RAY FLUORESCENCE; X-RAY EXCITED OPTICAL LUMINESCENCE; X-RAY FLUX;

ABSORPTION; CRYSTALLINE MATERIALS; ELECTRONIC DENSITY OF STATES; FLUORESCENCE; INDUCED CURRENTS; SIZE DISTRIBUTION; TRANSITION METALS; X RAY ABSORPTION;

X RAYS;

EID: 77957954431 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.201000002 Document Type: Article

Times cited : (4)

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