Impact of material composition on the write performance of phase-change memory devices

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Boniardi, M ^a   Ielmini, D ^a   Lacaita, A L ^a   Redaelli, A ^b   Pirovano, A ^b   Tortorelli, I ^b   Allegra, M ^b   Magistretti, M ^b   Bresolin, C ^b   Erbetta, D ^b   Modelli, A ^b   Varesi, E ^b   Pellizzer, F ^b   Bez, R ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Numonyx   (Italy)

Author keywords

Chalcogenide; Composition engineering; Phase change memory; Ternary diagram

Indexed keywords

BINARY DATA; CHALCOGENIDE ALLOY; COMPOSITION ENGINEERING; CONDUCTIVE PHASE; CRYSTALLIZATION MECHANISMS; DATA STORAGE; DEVICE RELIABILITY; MATERIAL COMPOSITIONS; PERFORMANCE PARAMETERS; PERFORMANCE SPECIFICATIONS; PHASE-CHANGE MEMORY TECHNOLOGIES; PROGRAM PARAMETERS; REVERSIBLE TRANSITIONS; TERNARY COMPOUNDS; TERNARY-DIAGRAM; WORK FOCUS;

GERMANIUM; TELLURIUM COMPOUNDS; TERNARY ALLOYS; TERNARY SYSTEMS;

PHASE CHANGE MEMORY;

EID: 77957900735     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488329     Document Type: Conference Paper

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