The investigation of an amorphous SiOx system for charge storage applications in nonvolatile memory at low temperature process

Materials Science and Engineering: B

Volumn 175, Issue 2, 2010, Pages 176-180

  Van Duy, Nguyen ^a   Jung, Sungwook ^a   Nga, Nguyen Thanh ^a   Son, Dang Ngoc ^a   Cho, Jaehyun ^a   Lee, Sunhwa ^a   Lee, Wonbaek ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Nonvolatile memory; Silicon oxynitride

Indexed keywords

AMORPHOUS SILICON; CHARGE TRAPPING; FLOW OF GASES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METAL INSULATOR BOUNDARIES; NONVOLATILE STORAGE; OXYGEN; PHOTOLUMINESCENCE; SILICON NITRIDE; SILICON OXIDES; SILICON WAFERS; TEMPERATURE;

CHARGE STORAGE; CHARGE TRAP; CHARGE-STORAGE MATERIALS; LOW- TEMPERATURE PROCESS; NON-VOLATILE MEMORY; NONVOLATILE MEMORY; SILICON RICH; SILICONOXYNITRIDE; SIO X; TRAP TYPE;

SILICA;

EID: 77957868101     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.07.009     Document Type: Article

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