Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

2010 IEEE International Frequency Control Symposium, FCS 2010

Volumn , Issue , 2010, Pages 499-502

  Bruckner, Gudrun ^a   Bardong, Jochen ^a   Fachberger, René ^a   Forsén, Esko ^b   Eisele, David ^c  

^a CTR CARINTHIAN TECH RESEARCH AG   (Austria)

^b DANISH TECHNOLOGICAL INSTITUTE   (Denmark)

^c UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; ANNEALING TREATMENTS; ELEVATED TEMPERATURE; HIGH FREQUENCY; HIGH TEMPERATURE; SAPPHIRE SUBSTRATES; SAW DELAY LINE; SURFACE ACOUSTIC WAVES; TEMPERATURE STABILITY;

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC WAVES; ACOUSTICS; ALUMINUM NITRIDE; NITRIDES; SAPPHIRE; SUBSTRATES; WAVES;

FREQUENCY RESPONSE;

EID: 77957864822     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/FREQ.2010.5556280     Document Type: Conference Paper

References (12)

1. M. B. Assouar, O. Elmazria, M. El Hakiki, P. Alnot, and C. Tiusan, "Low temperature AlN thin film growth for layered structure SAW and BAW devices," ISAF-04 Applications of Ferroelectrics, 14th IEEE International Symposium on, pp. 43-46, 2004.
2. K. Uehara, C. M. Yang, T. Shibata, S. K. Kim, S. Kameda, H. Nakase, and K. Tsubouchi, "Fabrication of 5-GHz-band SAW filter with atomically-flat-surface AlN on sapphire," Ultrasonics Symposium, 2004 IEEE, vol. 1, pp. 203-206, 2004.
3. J. Bardong, G. Bruckner, G. Franz, A. Erlacher and R. Fachberger, "Characterisation setup of SAW Devices at high temperatures and ultra high frequencies", in Proc. (IEEE) Frequency Control Symposium, Besancon, France, May 2009, pp 28 - 32.
4. R.C. Peach, "A General Green Function Analysis For Saw Devices," Ultrasonics Symposium, 1995. Proceedings., IEEE, vol. 1, 1994, pp.221-225.
5. M.J.S. Lowe, "Matrix Techniques For Modeling Ultrasonic Waves In Multilayered Media," IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 42, no. 4, 1995, pp.525-542.
6. L.E. McNeil, M. Grimsditch, R.H. French, "Vibrational Spectroscopy of Aluminum Nitride," J. Am. Ceram. Soc. Vol. 76, no. 5, 1993, pp 1132-1136.
7. L. Xinjiao, X. Zechuan, H. Ziyou, C. Huazhe, S. Wuda, C. Zhongcai, Z. Feng, W. Enguang," On The Properties Of AlN Thin Films Grown By Low Temperature Reactive R.F. Sputtering," Thin Solid Films vol. 139, no. 3, 1986, pp 261-274.
8. Y. Goldberg, Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. John Wiley & Sons, 2001.
9. M.J. Weber, Handbook Of Optical Materials. CRC Press LLC, 2003.
10. U. Aschauer, P. Bowen, S.C. Parker, "Oxygen Vacancy Diffusion In Alumina: New Atomistic Simulation Methods Applied To An Old Problem," Acta Materialia vol. 57, 2009, pp 4765-4772.
11. J.M. Rouvaen, A. Menhaj-Rivenq, P. Logette, P. Goutin, F. Haine, "Simultaneous Generation Of Longitudinal And Shear Bulk Ultrasonic Waves In Solids," J. Phys. D: Appl. Phys. vol. 33, 2000, pp 1287-1297.
12. 3) up to 2100 K, ".