Low temeparture alN thin films growth for layered structure saw and baw devices

IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 2005, Pages 43-46

  Assouar, M B ^a   Elmazria, O ^a   Hakiki, M El ^a   Alnot, P ^a   Tiusan, C ^a  

^a INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; DEPOSITION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; MORPHOLOGY; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ALN THIN FILMS; BAW DEVICES; ELECTROMECHANICAL COUPLINGS; LAYERED STRUCTURED SAW;

THIN FILMS;

EID: 28144462895     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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