Analysis of electroluminescence from silicon heterojunction solar cells

Energy Procedia

Volumn 2, Issue 1, 2010, Pages 19-26

  Bruggemann R ^a   Olibet, S ^b  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b EPFL   (Switzerland)

Author keywords

Diffusion length; Electroluminescence; Interface defects; Photoluminescence; Solar cell

Indexed keywords

ANALYTICAL RELATIONS; CELL BEHAVIORS; CRYSTALLINE SILICONS; CURRENT-VOLTAGE RELATIONS; DENSITY OF DEFECTS; DIFFUSION LENGTH; ELECTROLUMINESCENCE EFFICIENCIES; ELECTROLUMINESCENCE PROPERTIES; EXPONENTIAL DEPENDENCE; INTERFACE DEFECTS; NUMERICAL SIMULATION; PHOTOVOLTAIC DEVICES; SATURATION CURRENT DENSITIES; SILICON HETEROJUNCTIONS;

CRYSTALLINE MATERIALS; DEFECTS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; SOLAR CELLS; SOLAR POWER GENERATION;

AMORPHOUS SILICON;

EID: 77957780650     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2010.07.005     Document Type: Conference Paper

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