Luminescence, quasi-Fermi levels and applied voltage in ideal and real semiconductor structures

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 1, 2007, Pages 77-83

  Bruggemann R ^a   Behrends, J ^a   Meier, S ^a   Tardon, S ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

Band to band recombination coefficient; Crystalline silicon; Electroluminescence; Photoluminescence; Quasi Fermi level

Indexed keywords

ELECTROLUMINESCENCE; FERMI LEVEL; LIGHT; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; TEMPERATURE;

BAND-TO-BAND RECOMBINATION; CRYSTALLINE SILICONS; ELECTROLUMINESCENCE EFFICIENCIES; ELECTROLUMINESCENCE SPECTRA; QUASI-FERMI LEVEL; QUASI-FERMI LEVEL SPLITTING; SATURATION CURRENT DENSITIES; SEMICONDUCTOR STRUCTURE;

SEMICONDUCTOR DIODES;

EID: 38749116948     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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