Optimized microcavity and photonic crystal parameters of GaN-based ultrathin-film light-emitting diodes for highly directional beam profiles

IEEE Photonics Technology Letters

Volumn 22, Issue 21, 2010, Pages 1547-1549

  Lai, Chun Feng ^a   Chao, Chia Hsin ^a   Yeh, Wen Yung ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

GaN; light emitting diodes (LEDs); microcavity; photonic crystals (PhCs)

Indexed keywords

BEAM PROFILES; CRYSTAL PARAMETERS; EMISSION DISTRIBUTION; FAR-FIELD; GAN; GUIDED MODES; MICROCAVITY EFFECTS; OUTPUT POWER; PHOTONIC CRYSTALS (PHCS); ULTRA-THIN;

DIODES; EXTRACTION; FIELD EMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; MICROCAVITIES; OPTIMIZATION;

PHOTONIC CRYSTALS;

EID: 77957740497     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2066965     Document Type: Article

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