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Journal of the Electrochemical Society

Volumn 157, Issue 11, 2010, Pages

Cr-doped ZnO prepared by electrochemical deposition

(6) Lan, C J a Tsay, J S a Lo, C K a Lin, C A b He, J H b Chung, R J c

a NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED POTENTIALS; BAND GAPS; CHEMICAL BINDING; CR CONTENT; CR-DOPED; CRIII IONS; ELECTROCHEMICAL DEPOSITION; HIGH CONCENTRATION; IMPURITY PHASIS; INDUCTIVE COUPLED PLASMA; LATTICE STRUCTURES; RED SHIFT; TRIVALENT STATE; UV AND VISIBLE LIGHT; UV VISIBLE SPECTROSCOPY; WURTZITE STRUCTURE; ZNO;

DEPOSITS; ELECTRODEPOSITION; MASS SPECTROMETRY; OPTICAL EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REDUCTION; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

CHROMIUM;

EID: 77957702261 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3481408 Document Type: Article

Times cited : (12)

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