Low temperature doping of ZnO nanostructures

Science in China, Series E: Technological Sciences

Volumn 52, Issue 2, 2009, Pages 318-323

  Cui, J B ^a   Thomas, M A ^a   Kandel, H ^a   Soo, Y C ^a   Chen, T P ^a  

^a University of Arkansas at Little Rock ^*  (United States)

Author keywords

Doping; Nanowires; Zinc oxide

Indexed keywords

ELECTRIC WIRE; LOW TEMPERATURE PRODUCTION; NANOSTRUCTURES; NANOWIRES; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; OXIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; TRANSITION METALS; ZINC; ZINC OXIDE;

DOPANT INCORPORATIONS; DOPANT MATERIALS; DOPING; ELECTROCHEMICAL PROCESS; ELECTRONIC APPLICATIONS; ENERGY DISPERSIVE; LARGE-SCALE PRODUCTIONS; LOW TEMPERATURES; MICRO-FABRICATION TECHNIQUES; SCANNING ELECTRONS; STRUCTURE AND PROPERTIES; X- RAY DIFFRACTIONS; X-RAY SPECTROSCOPIES; ZNO; ZNO NANOSTRUCTURES; ZNO STRUCTURES;

DOPING (ADDITIVES);

EID: 59849104500     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0353-9     Document Type: Article

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