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Volumn 5, Issue 4, 2009, Pages 145-150

Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control

Author keywords

Bandgap engineering; Photovoltaics; Quantum dot; Strain control

Indexed keywords

BAND GAP ENGINEERING; CONDUCTION BAND EDGE; CONFINEMENT POTENTIAL; CONTINUUM ELASTICITY; INAS/GAAS; INTERMEDIATE LAYERS; NUMERICAL RESULTS; OPTO-ELECTRONICS; OPTOELECTRONIC PROPERTIES; PHOTOVOLTAICS; QUANTUM DOT; QUANTUM DOTS; STRAIN RELIEF; VALENCE BAND EDGES;

EID: 77957670986     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: 10.3365/eml.2009.12.145     Document Type: Article
Times cited : (6)

References (14)
  • 1
    • 77957675166 scopus 로고    scopus 로고
    • Quantum Wells, Wires and Dots, Wiley, New York
    • P. Harrison, Quantum Wells, Wires and Dots, Wiley, New York (2000).
    • (2000)
    • Harrison, P.1
  • 7
    • 77957658874 scopus 로고
    • Physics of Optoelectronic Devices, Wiley, New York
    • S.L. Chuang, Physics of Optoelectronic Devices, Wiley, New York, (1995).
    • (1995)
    • Chuang, S.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.