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Volumn 5, Issue 4, 2009, Pages 145-150
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Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control
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Author keywords
Bandgap engineering; Photovoltaics; Quantum dot; Strain control
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Indexed keywords
BAND GAP ENGINEERING;
CONDUCTION BAND EDGE;
CONFINEMENT POTENTIAL;
CONTINUUM ELASTICITY;
INAS/GAAS;
INTERMEDIATE LAYERS;
NUMERICAL RESULTS;
OPTO-ELECTRONICS;
OPTOELECTRONIC PROPERTIES;
PHOTOVOLTAICS;
QUANTUM DOT;
QUANTUM DOTS;
STRAIN RELIEF;
VALENCE BAND EDGES;
ELECTRON MOBILITY;
ENERGY GAP;
NUMERICAL ANALYSIS;
PHOTOVOLTAIC EFFECTS;
SEMICONDUCTOR QUANTUM DOTS;
STRAIN CONTROL;
THREE DIMENSIONAL;
NANOSYSTEMS;
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EID: 77957670986
PISSN: 17388090
EISSN: None
Source Type: Journal
DOI: 10.3365/eml.2009.12.145 Document Type: Article |
Times cited : (6)
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References (14)
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