Optically activated SiC power transistors for pulsed-power application

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1146-1148

  Zhao, Feng ^a   Islam, Mohammad M ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Optically activated; power switch; pulsed power; SiC transistors

Indexed keywords

4H-SIC SUBSTRATE; BAND GAPS; BIPOLAR STRUCTURE; CURRENT GAINS; DRIVING DEVICE; ENERGY EFFICIENT; FALL TIME; FURTHER DEVELOPMENT; HIGH POWER APPLICATIONS; HIGH TEMPERATURE; HIGH-SPEED; OPTICAL ENERGY; OPTICALLY ACTIVATED; OPTICALLY CONTROLLED; PHOTOGENERATED CURRENT; POWER REQUIREMENT; POWER SWITCHES; POWER TRANSISTORS; PULSED-POWER; RISETIMES; SIC TRANSISTORS; SWITCH-ON;

POWER ELECTRONICS; SILICON CARBIDE; TIME SWITCHES;

TRANSISTORS;

EID: 77957599260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2058840     Document Type: Article

References (11)

1. K. Shenai, R. S. Scott, and B. J. Baliga, "Optimum semiconductors for high-power electronics," IEEE Trans. Electron Devices, vol.36, no.9, pp. 1811-1822, Sep. 1989.
2. W. Nunnally and M. Mazzola, "Opportunities for employing SiC in high power photo-switches," in Proc. IEEE Pulsed Power Conf., 2003, vol.2, pp. 823-826.
3. S. K. Mazumder and T. Sarkar, "Optically-triggered power transistor (OTPT) for fly-by-light (FBL) and EMI-susceptible power electronics," in Proc. IEEE Power Electron. Spec. Conf., 2006, pp. 1-8.
4. M. E. Levinshtein, P. A. Ivanov, A. K. Agarwal, and J. W. Palmour, "Optical switch-on of silicon carbide thyristor," Electron. Lett., vol.38, no.12, pp. 592-593, Jun. 2002.
5. S. Dogan, A. Teke, D. Huang, H. Morkoc, C. B. Roberts, J. Parish, B. Ganguly, M. Smith, R. E. Myers, and S. E. Saddow, "4H-SiC photoconductive switching devices for use in high-power applications," Appl. Phys. Lett., vol.82, no.18, pp. 3107-3109, May 2003.
6. F. Zhao, M. M. Islam, P. Muzykov, A. Bolotnikov, and T. S. Sudarshan, "Optically activated 4H-SiC p-i-n diodes for high power applications," IEEE Electron Device Lett., vol.30, no.11, pp. 1182-1184, Nov. 2009.
7. C. G. Braun, "Hybrid power switch concept," in Proc. 10th IEEE Int. Pulsed Power Conf., 1995, vol.2, pp. 1488-1493.
8. S. K. Mazumder and T. Sarkar, "SiC based optically-gated high-power solid-state switch for pulsed-power application," Mater. Sci. Forum, vol.600-603, pp. 1195-1198, 2009.
9. G. M. Loubriel, F. J. Zutavemn, H. P. Hjalmarson, and M. W. OMalJey, "Closing photoconductive switches," presented at the 7th IEEE Pulsed Power Conf., Monterey, CA, Jun. 11-14, 1989.
10. K. H. Schoenbach, V. K. Lakdawala, R. Germer, and S. T. Ko, "An optically controlled closing and opening semiconductor switch," J. Appl. Phys., vol.63, no.7, pp. 2460-2463, Apr. 1988.
11. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. Hoboken, NJ: Wiley, 2007.