Comparative study of process window identification methods for 45 nm device and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7272, Issue , 2009, Pages

  Kang, HoSeong ^a   Lee, SooCheol ^a   Kim, MinHo ^a   Kim, KiHo ^a   Jeong, Yongteak ^a   Paeb, YeonHo ^b   Lee, ChangHo ^b  

^a SAMSUNG Electronics   (South Korea)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

Defect inspection; Design; FEM; Hotspot; OPC; Process window identification; PWQ

Indexed keywords

DEFECT INSPECTION; FEM; HOTSPOT; OPC; PROCESS WINDOW IDENTIFICATION; PWQ;

DESIGN; FINITE ELEMENT METHOD; IDENTIFICATION (CONTROL SYSTEMS); INSPECTION; LITHOGRAPHY; WINDOWS;

PROCESS CONTROL;

EID: 66649084052     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814019     Document Type: Conference Paper

References (1)

1. Yeh, J.H. and Park, A., "Novel Technique to Separate Systematic and Random Defects during 45 nm and 65 nm Process Development," Proc. SPIE 6521, 652114 (2007). (Pubitemid 47551348)