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Volumn 31, Issue 10, 2010, Pages 1119-1121

InGaN/GaN Schottky diodes with enhanced voltage handling capability for varactor applications

Author keywords

Diode breakdown voltage; GaN varactor; InGaN GaN heterojunction; polarization charge; Schottky diode leakage current

Indexed keywords

BREAKDOWN VOLTAGE; GAN VARACTOR; INGAN/GAN; POLARIZATION CHARGE; SCHOTTKY DIODES;

EID: 77957558293     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2058843     Document Type: Article
Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.