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Semiconductors

Volumn 44, Issue 9, 2010, Pages 1158-1166

Charge neutrality level and electronic properties of GaSe under pressure

(3) Brudnyi, V N a Kosobutsky, A V b Sarkisov, S Yu a

a TOMSK STATE UNIVERSITY (Russian Federation)

b KEMEROVO STATE UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957319839 PISSN: 10637826 EISSN: None Source Type: Journal
DOI: 10.1134/S1063782610090095 Document Type: Article

Times cited : (33)

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