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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 10, 2008, Pages 3405-3409

The contact characteristics of Al p-GaSe Schottky diode

(5) Huang, Wen Chang a Horng, Chia Tsung a Chen, Yu Min a Hsu, Yu Kuei b Chang, Chen Shiung b

a KUN SHAN UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BRIDGMAN; CONTACT CHARACTERISTICS; CURRENT VOLTAGE; HIGH TEMPERATURE; IDEALITY FACTORS; LAYERED SEMICONDUCTORS; LOW TEMPERATURE REGIONS; LOWER ENERGIES; RICHARDSON PLOT; SCHOTTKY BARRIERS; SCHOTTKY DIODES; TEMPERATURE RANGE;

ACTIVATION ENERGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR SWITCHES; TECHNICAL PRESENTATIONS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77951157633 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200878881 Document Type: Conference Paper

Times cited : (7)

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