S-doped GaSe for sub-microwave generation

Proceedings - 2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering, SIBIRCON-2010

Volumn , Issue , 2010, Pages 576-580

  Luo, C W ^a   Ku, S A ^a   Chu, W C ^a   Andreev, Yu M ^b   Atuchin, V V ^c   Beizel, N F ^d   Lanskii, G V ^b   Morozov, A N ^b   Zuev, V V ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF MONITORING OF CLIMATIC AND ECOLOGICAL SYSTEMS   (Russian Federation)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COMPOSITION; CHEMICAL FORMULAE; DOWNCONVERSION; FREQUENCY CONVERSIONS; GASE CRYSTALS; NEAR-IR; S-DOPED; TI: SAPPHIRE LASER; TRADITIONAL TECHNIQUES;

ELECTRONICS ENGINEERING; MICROWAVE GENERATION;

OPTICAL PROPERTIES;

EID: 77957252244     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SIBIRCON.2010.5555139     Document Type: Conference Paper

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