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Volumn 14, Issue 12, 2006, Pages 5484-5491

Erbium doped GaSe crystal for mid-IR applications

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ERBIUM; LIGHT AMPLIFIERS; NONLINEAR OPTICS; PARAMETRIC AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33745161560     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.14.005484     Document Type: Article
Times cited : (49)

References (18)
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  • 2
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  • 3
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    • 2 at 7.4 μm by difference frequency spectroscopy
    • 2 at 7.4 μm by difference frequency spectroscopy," Appl. Phys. B 76, 441-449 (2003).
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    • Henningsen, J.1    Hald, J.2
  • 6
    • 0000716161 scopus 로고    scopus 로고
    • Improved crystal quality and harmonic generation in GaSe doped with indium
    • D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, "Improved crystal quality and harmonic generation in GaSe doped with indium," Opt. Lett. 22, 775-777 (1997).
    • (1997) Opt. Lett. , vol.22 , pp. 775-777
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  • 9
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    • Photoluminescence study of GaSe doped with Er
    • Y. K. Hsu, C. S. Chang, and W. F. Hsieh, "Photoluminescence study of GaSe doped with Er," Jpn. J. Appl. Phys. 42, 4222-4225 (2003).
    • (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 4222-4225
    • Hsu, Y.K.1    Chang, C.S.2    Hsieh, W.F.3
  • 10
    • 4043152922 scopus 로고    scopus 로고
    • Electrical properties of GaSe doped with Er
    • Y. K. Hsu, C. S. Chang, and W. C. Huang, "Electrical properties of GaSe doped with Er," J. Appl. Phys. 96, 1563-1567 (2004)
    • (2004) J. Appl. Phys. , vol.96 , pp. 1563-1567
    • Hsu, Y.K.1    Chang, C.S.2    Huang, W.C.3
  • 14
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    • New dispersion relationships for GaSe in the 0.65-18 μm spectral region
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  • 16
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    • Finsterbusch, K.1    Bayer, A.2    Zacharias, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.