Growth, real structure and applications of GaSe1-xSx crystals

Materials Science and Engineering: B

Volumn 128, Issue 1-3, 2006, Pages 205-210

  Andreev, Yu M ^a   Atuchin, V V ^b   Lanskii, G V ^a   Morozov, A N ^c   Pokrovsky, L D ^b   Sarkisov, S Yu ^c   Voevodina, O V ^c  

^a INSTITUTE OF MONITORING OF CLIMATIC AND ECOLOGICAL SYSTEMS   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Cleaving; Crystal growth; Defect structure; Doping; GaSe

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES);

CLEAVING; DEFECT STRUCTURE; GASE; GROWING TECHNOLOGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33344476413     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.12.012     Document Type: Article

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