Modified GaSe crystals for mid-IR applications

Journal of Crystal Growth

Volumn 198-199, Issue PART I, 1999, Pages 588-592

  Singh, N B ^a   Suhre, D R ^a   Rosch, W ^a   Meyer, R ^a   Marable, M ^a   Fernelius, N C ^b   Hopkins, F K ^b   Zelmon, D E ^b   Narayanan, R ^c  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c University of Florida   (United States)

Author keywords

Bridgman; Gallium selenide; Nonlinear; Second harmonic; Solid solution

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL GROWTH; NONLINEAR OPTICS; SECOND HARMONIC GENERATION; SEMICONDUCTING INDIUM; SEMICONDUCTING SILVER COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILVER; SINGLE CRYSTALS; STOICHIOMETRY;

BRIDGMAN TECHNIQUE; GALLIUM SELENIDE; SILVER GALLIUM SELENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033514736     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01214-7     Document Type: Article

References (5)

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3. N.B. Singh, T. Henningsen, Z. Kun, K.C. Yoo, R.H. Hopkins, R. Mazelsky, Progr. Cryst. and Char. 20 (1990) 175.
4. N.B. Singh, T. Henningsen, V. Balakrishna, D.R. Suhre, N.C. Fernelius, F.K. Hopkins, D.E. Zelmon, J. Crystal Growth 163 (1996) 398.
5. D.R. Suhre, N.B. Singh, V. Balakrishna, N.C. Fernelius, F.K. Hopkins, Opt. Lett. 22 (1997) 775.